Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-11
2006-07-11
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000
Reexamination Certificate
active
07074661
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device with a polymetal gate electrode formed by a partial gate recessing process. The method includes the steps of forming a gate structure including a gate dielectric layer, a polysilicon layer, a metal layer, an etch stop layer and a sacrificial layer sequentially formed on a substrate; selectively performing a re-oxidation process to the gate structure; forming a spacer on each sidewall of the gate structure; implanting ions in the substrate for forming source/drain regions; selectively removing the sacrificial layer of the gate structure to form a recess; and filling an insulating hard mask into the recess for use in a self-aligned contact etching process.
REFERENCES:
patent: 6307226 (2001-10-01), Dennison
patent: 6720630 (2004-04-01), Mandelman et al.
patent: 6753215 (2004-06-01), Kasuya
Cho Heung-Jae
Jang Se-Aug
Lim Kwan-Yong
Baumeister B. William
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
Reames Matthew L
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