Method for fabricating semiconductor device with thin gate...

Details Method for fabricating semiconductor device with thin gate... Method for fabricating semiconductor device with thin gate...

2007-03-16

2008-10-07

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S304000, C438S303000, C438S508000, C438S508000

Reexamination Certificate

active

07432168

ABSTRACT:
A method for fabricating a transistor. A substrate having a gate electrode thereon and insulated therefrom is provided. A first gate spacer with a first dielectric material is formed on the sidewalls of the gate electrode. A liner with a second dielectric material is formed on the upper surfaces of the substrate, the first gate spacer and the gate electrode, wherein the first dielectric material has an etching selectivity relative to the second dielectric material. Ion implantation is performed on the substrate to form source/drain regions in the substrate and substantially self-aligned with the liner on the first gate spacer. The liner is removed from the upper surfaces of the gate electrode and the source/drain regions. A method for fabricating a semiconductor device is also disclosed.

REFERENCES:
patent: 5234850 (1993-08-01), Liao
patent: 5757045 (1998-05-01), Tsai et al.
patent: 6124175 (2000-09-01), Gardner et al.
patent: 6156615 (2000-12-01), Kepler
patent: 6555865 (2003-04-01), Lee et al.
patent: 6767835 (2004-07-01), Nariman et al.
patent: 6864143 (2005-03-01), Shue et al.
patent: 6913979 (2005-07-01), You et al.

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