Method for fabricating semiconductor device with recessed...

Details Method for fabricating semiconductor device with recessed... Method for fabricating semiconductor device with recessed...

2007-06-19

2007-06-19

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S271000

Reexamination Certificate

active

11030438

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device with a plurality of recessed channel regions. This method includes the steps of: forming a plurality of device isolation layers in a substrate;forming a hard mask nitride layer, a hard mask oxide layer and a hard mask polysilicon layer on the device isolation and the substrate, thereby obtaining a hard mask pattern; forming a plurality of trenches in the predetermined regions of the substrate with use of the hard mask pattern to expose a plurality of recessed channel regions; selectively removing the hard mask pattern; and forming a plurality of gate structures in the plurality of trenches.

REFERENCES:
patent: 6071809 (2000-06-01), Zhao
patent: 6277707 (2001-08-01), Lee et al.
patent: 6518145 (2003-02-01), Alsmeier et al.
patent: 20010038753 (2001-05-01), None
patent: 20030082824 (2003-10-01), None
“The Breakthrough in data retention of DRAM using Recess-Channel-Array Transistor (RCAT) FOR 88nm feature size and beyond”, J. Kim, et al., 2003 Symposium on VLSI Technology Digest of Technical Papers, 2 pages.

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