Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-11
2007-12-11
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21655
Reexamination Certificate
active
11450764
ABSTRACT:
A method for fabricating a semiconductor device with a recessed channel, including the steps of: forming trenches for a recessed channel in an active area of a semiconductor substrate; forming a gate insulating layer on the semiconductor substrate having the trenches; forming a gate conductive layer on the entire surface of the resulting structure so that the trenches are buried; forming a silicon-rich amorphous metal silicide layer having seams on the gate conductive layer; filling the seams of the silicon-rich amorphous metal silicide layer with a metal thin film; forming a gate hard mask on the silicon-rich amorphous metal silicide layer and the metal thin film; patterning the gate insulating layer, the gate conductive layer, the silicon-rich amorphous metal silicide layer and the gate hard mask to form gate stacks; and thermally processing the silicon-rich amorphous metal silicide layer and the metal thin film to form a crystallized metal silicide layer.
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patent: 5877520 (1999-03-01), Hynecek
patent: 2005/0042833 (2005-02-01), Park et al.
patent: 2005/0054163 (2005-03-01), Kim et al.
patent: 2007/0117294 (2007-05-01), Kim
Coleman W. David
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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