Method for fabricating semiconductor device with recess gate

Details Method for fabricating semiconductor device with recess gate Method for fabricating semiconductor device with recess gate

2007-10-30

2010-12-28

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S589000, C257SE21549

Reexamination Certificate

active

07858476

ABSTRACT:
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming a first recess in the substrate and a passivation layer on sidewalls of the first recess using the hard mask pattern as an etch barrier, and forming a second recess by etching a bottom portion of the first recess using the passivation layer as an etch barrier, wherein a width of the second recess is greater than that of the first recess.

REFERENCES:
patent: 4763179 (1988-08-01), Tsubouchi et al.
patent: 5348616 (1994-09-01), Hartman et al.
patent: 6376383 (2002-04-01), Mitsuiki
patent: 6521524 (2003-02-01), Wang et al.
patent: 6521538 (2003-02-01), Soga et al.
patent: 6524944 (2003-02-01), Rangarajan et al.
patent: 6544838 (2003-04-01), Ranade et al.
patent: 6693006 (2004-02-01), Ho et al.
patent: 6833079 (2004-12-01), Giordani
patent: 6905944 (2005-06-01), Chudzik et al.
patent: 6919640 (2005-07-01), Jeon et al.
patent: 6979652 (2005-12-01), Khan et al.
patent: 7314792 (2008-01-01), Kim et al.
patent: 7345338 (2008-03-01), Han et al.
patent: 7462562 (2008-12-01), Fujita
patent: 7485557 (2009-02-01), Han et al.
patent: 7507651 (2009-03-01), Cho et al.
patent: 7553767 (2009-06-01), Cho et al.
patent: 2001/0023956 (2001-09-01), Collins et al.
patent: 2001/0023960 (2001-09-01), Soga et al.
patent: 2002/0094690 (2002-07-01), Athavale et al.
patent: 2003/0129825 (2003-07-01), Yoon
patent: 2004/0086787 (2004-05-01), Waheed et al.
patent: 2005/0001252 (2005-01-01), Kim et al.
patent: 2005/0066994 (2005-03-01), Biles et al.
patent: 2005/0266691 (2005-12-01), Gu et al.
patent: 2006/0032833 (2006-02-01), Kawaguchi et al.
patent: 2006/0113590 (2006-06-01), Kim et al.
patent: 2006/0150914 (2006-07-01), Yamamoto et al.
patent: 2006/0160351 (2006-07-01), Ahn
patent: 2006/0237817 (2006-10-01), Park
patent: 2006/0267085 (2006-11-01), Matsuura
patent: 2006/0289931 (2006-12-01), Kim et al.
patent: 2007/0020861 (2007-01-01), Chong et al.
patent: 2007/0054505 (2007-03-01), Antonelli et al.
patent: 2007/0059897 (2007-03-01), Tilke et al.
patent: 2007/0087520 (2007-04-01), Mitsuiki et al.
patent: 2007/0087521 (2007-04-01), Fujita
patent: 2007/0099383 (2007-05-01), Han et al.
patent: 2007/0099384 (2007-05-01), Han et al.
patent: 2007/0105388 (2007-05-01), Lee et al.
patent: 2007/0111469 (2007-05-01), Kim et al.
patent: 2007/0123014 (2007-05-01), Han et al.
patent: 2007/0131652 (2007-06-01), Okune et al.
patent: 2007/0148934 (2007-06-01), Cho et al.
patent: 2007/0155101 (2007-07-01), Lee et al.
patent: 2007/0224762 (2007-09-01), Lee
patent: 2007/0224763 (2007-09-01), Fujimoto et al.
patent: 2007/0238295 (2007-10-01), Alapati et al.
patent: 2007/0249172 (2007-10-01), Huang et al.
patent: 2007/0254465 (2007-11-01), Jung
patent: 2008/0038673 (2008-02-01), Nagaiwa et al.
patent: 2008/0081449 (2008-04-01), Cho et al.
patent: 2008/0087948 (2008-04-01), Kim
patent: 2008/0102624 (2008-05-01), Cho et al.
patent: 2008/0132074 (2008-06-01), Kim
patent: 2008/0146029 (2008-06-01), Baks et al.
patent: 2008/0157194 (2008-07-01), Lee et al.
patent: 2008/0160742 (2008-07-01), Cho et al.
patent: 2009/0025876 (2009-01-01), Magni
patent: 2009/0045482 (2009-02-01), Liaw et al.
patent: 2009/0121309 (2009-05-01), Kim
patent: 1224234 (1999-07-01), None
patent: 1784768 (2006-06-01), None
patent: 2001-244325 (2001-09-01), None
patent: 1020000006567 (2000-01-01), None
patent: 1020060114180 (2006-11-01), None
Quirk et al., “Semiconductor Manufacturing Technology”, Prentice Hall, 2001, pp. 450.
Office Action for Korean Application 10-2007-0009862.
Office Action for Korean Application 10-2006-0105458.
Notice of Allowance for Korean patent application 10-2007-0009862.
Chinese Office Action for Chinese Application No. 200710181598.9.
Office Action for Korean Application 10/2006/0105458.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device with recess gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device with recess gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device with recess gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4161993