Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-22
2011-12-20
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S224000, C438S424000, C257SE21258
Reexamination Certificate
active
08080455
ABSTRACT:
A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
REFERENCES:
patent: 6596656 (2003-07-01), Tanaka et al.
patent: 2006/0223269 (2006-10-01), Honma
patent: 1701442 (2005-11-01), None
Chang Hung-Li
Chen Shih-Ming
Chuang Pi-Kuang
Lin Chih-Ping
Yang Hsiao-Ying
Nguyen Thanh
Vanguard International Semiconductor Corporation
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