Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-09-04
2007-09-04
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S533000, C438S923000, C257S021000
Reexamination Certificate
active
10750318
ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with improved refresh time. The method includes the steps of: forming a plurality of gate lines on a substrate; forming a plurality of cell junctions by ion-implanting a first dopant with use of the gate lines as a mask; forming a buffer layer along a gate line profile; and forming a plurality of plug ion-implantation regions in the cell junctions by ion-implanting a second dopant into the substrate under the presence of the buffer layer to thereby from the plugs thereon.
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Hong Byung-Seop
Oh Jae-Geun
Hynix / Semiconductor Inc.
Smith Bradley K.
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