Method for fabricating semiconductor device with epitaxial...

Details Method for fabricating semiconductor device with epitaxial... Method for fabricating semiconductor device with epitaxial...

2007-10-14

2010-02-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21409

Reexamination Certificate

active

07662691

ABSTRACT:
A semiconductor device comprises an active region including a first active area to be a source/drain and a second active area to be a gate, and a device isolation region defining the active region. The first active area is obtained by growing a semiconductor substrate located between the gates as a seed layer, and formed to have a larger line-width than that of the second active area in a longitudinal direction of the gate.

REFERENCES:
patent: 7166514 (2007-01-01), Kang et al.
patent: 2006/0131657 (2006-06-01), Hamaguchi
patent: 2006/0220131 (2006-10-01), Kinoshita et al.
patent: 2007/0212874 (2007-09-01), Sandhu

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device with epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device with epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device with epitaxial... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4191183