Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-08-30
2011-08-30
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S597000, C438S642000, C257SE21495, C257SE29129
Reexamination Certificate
active
08008178
ABSTRACT:
A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.
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Cho Heung-Jae
Kim Tae-Kyung
Kim Yong-soo
Lim Kwan-Yong
Sung Min-Gyu
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Nguyen Duy T
Pham Thanh V
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