Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-22
2008-01-22
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21655
Reexamination Certificate
active
11450789
ABSTRACT:
A method for fabricating a semiconductor device with a metal-polycide gate and a recessed channel, including the steps of: forming trenches for a recessed channel in an active area of a semiconductor substrate; forming a gate insulating layer on the semiconductor substrate having the trenches; forming a gate conductive layer on the entire surface of the resulting structure so that the trenches are buried; forming a silicon-rich amorphous metal silicide layer and a gate hard mask on the gate conductive layer; etching the resulting structure until upper portions of the gate conductive layer are removed by a predetermined thickness, upon first patterning for gate stacks, and forming a metal layer on the entire surface of the resulting structure; forming lateral metal capping layers on sides of the silicon-rich amorphous metal silicide layer by blanket etching, completing formation of gate stacks; and thermally processing the silicon-rich amorphous metal silicide layer to form a crystallized metal silicide layer.
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Coleman W. David
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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