Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-04
2005-01-04
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S398000
Reexamination Certificate
active
06838341
ABSTRACT:
A method for fabricating a semiconductor device includes preparing a semiconductor substrate having a contact pad; forming a first insulating film having a storage node contact exposing the contact pad and having a stack structure of an upper interlayer insulating film, a bottom interlayer insulating film, and an etching stopper between the upper and bottom interlayer insulating layers that protrudes into the storage node contact; forming a first conductive film for a storage node on the substrate; forming a second insulating film where a portion of a surface corresponding to the storage node contact is recessed; forming an etching mask layer on the recessed portion of the second insulating film; etching the second insulating film using the etching mask layer; forming a second conductive film for a storage node on the substrate; etching the first and second conductive films to isolate nodes; and removing the etching mask layer, the second insulating film and the upper interlayer insulating film.
REFERENCES:
patent: 6144095 (2000-11-01), Sandhu et al.
patent: 6268246 (2001-07-01), Ukita et al.
patent: 6432795 (2002-08-01), Lee
patent: 6696713 (2004-02-01), Ishibashi
patent: 2001-45911 (2001-06-01), None
English language of Abstract for Korean Patent Publication No. 2001-45911, filed Jun. 5, 2003.
Kim Wook-Je
Lee Sang-Hyun
Lee Yun-Jae
Yoon Jae-Man
Marger & Johnson & McCollom, P.C.
Nhu David
Samsung Electronic Co. Ltd.
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