Method for fabricating semiconductor device to lower...

Details Method for fabricating semiconductor device to lower... Method for fabricating semiconductor device to lower...

2006-04-24

2008-12-16

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S754000

Reexamination Certificate

active

07465664

ABSTRACT:
A method for fabricating a semiconductor device to lower source/drain sheet resistance is provided. A dielectric layer with a plurality of contact windows is formed on a semiconductor device. Next, selective epitaxial growth (SEG) is implemented, and then a metal layer is sputtered. After that, a silicide is formed by heat treatment. In another embodiment, selective epitaxial growth is implemented first, and then a dielectric layer with a plurality of contact windows is formed. Then, a metal layer is sputtered, and a silicide is then formed by heat treatment. Since the silicide is formed by way of SEG, the silicon substrate will not be consumed during the process of forming the silicide, and the depth of the junction region is maintained, and the source/drain sheet resistance is lowered.

REFERENCES:
patent: 5010032 (1991-04-01), Tang et al.
patent: 5302539 (1994-04-01), Haken et al.
patent: 5612253 (1997-03-01), Farahani et al.
patent: 6410429 (2002-06-01), Ho et al.
patent: 6521956 (2003-02-01), Lee
patent: 6784466 (2004-08-01), Chu et al.
patent: 6972250 (2005-12-01), Cabral et al.
patent: 6982474 (2006-01-01), Currie et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device to lower... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device to lower..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device to lower... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4022747