Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-06-29
2011-11-15
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S309000
Reexamination Certificate
active
08058121
ABSTRACT:
A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same conductive type as the substrate. A first doped region having the different conductive type from the epitaxial layer is formed in the epitaxial layer. An annealing process is performed to diffuse dopants in the first doped region. A second doped region and an adjacent third doped region are formed in the first doped region. The second doped region is a different conductive type from that of the first doped region, and the third doped region is the same conductive type as that of the first doped region. A gate structure is formed on the epitaxial layer covering a portion of the second and the third doped regions.
REFERENCES:
patent: 2009/0294841 (2009-12-01), Pendharkar et al.
patent: 1967870 (2007-05-01), None
patent: 101211972 (2008-07-01), None
Chen Chu-Feng
Chiue Hua-Chun
Kuo Pai-Chun
Lao Chung-Ren
Lin An-Hung
Vanguard International Semiconductor Corporation
Wojciechowicz Edward
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