Method for fabricating semiconductor device including recess...

Details Method for fabricating semiconductor device including recess... Method for fabricating semiconductor device including recess...

2007-06-26

2009-08-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S508000, C438S508000, C257S330000, C257S331000

Reexamination Certificate

active

07575974

ABSTRACT:
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate having a field oxide layer, etching the substrate to form a recess by using the hard mask pattern, forming a first conductive layer over the recess and the hard mask pattern, planarizing the first conductive layer, and forming a second conductive layer over the planarized first conductive layer.

REFERENCES:
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patent: 2004/0259310 (2004-12-01), Chang et al.
patent: 2005/0079661 (2005-04-01), Cho et al.
patent: 2005/0285177 (2005-12-01), Shone
patent: 2006/0128130 (2006-06-01), Jang et al.
patent: 2006/0216917 (2006-09-01), Seo
patent: 2006/0289931 (2006-12-01), Kim et al.
patent: 2007/0048930 (2007-03-01), Figura et al.
patent: 1020060032028 (2006-04-01), None
patent: 1020060068200 (2006-06-01), None
Office Action dated Nov. 28, 2008, for Chinese application No. 200710149528.5.

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