Method for fabricating semiconductor device including...

Details Method for fabricating semiconductor device including... Method for fabricating semiconductor device including...

2011-06-21

2011-06-21

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S700000, C438S742000, C438S751000, C438S430000

Reexamination Certificate

active

07964463

ABSTRACT:
A method for fabricating a semiconductor device includes forming a plurality of pillar structures over a substrate, forming gate electrodes over sidewalls of the pillar structures, forming a sacrificial layer buried between the pillar structures, etching the sacrificial layer and the substrate to form trenches in the substrate, forming first inter-layer insulation patterns buried over the trenches and removing the remaining sacrificial layer at substantially the same time, and forming second inter-layer insulation patterns over the first inter-layer insulation patterns and buried between the pillar structures.

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Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 25, 2010.

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