Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-11-11
2010-11-16
Mai, Anh D (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21618
Reexamination Certificate
active
07833870
ABSTRACT:
A semiconductor device is fabricated having a stack gate structure where a first gate electrode, a second gate electrode and a gate hard mask are stacked. The stack gate structure secures a contact open margin while reducing a loss of the gate hard mask during a self-aligned contact (SAC) etching process of forming a landing plug contact. An intermediate connection layer is formed in a landing plug contact region between the first gate electrodes. Furthermore, the occurrence of a bridge between a gate and a contact can be prevented while forming the landing plug contact. A conductive material is filled into a gate region including a recess between intermediate connection layers to form the first gate electrode. The second gate electrode and the gate hard mask are formed during a gate-patterning process using a gate mask, even though misalignment occurs between the gate and the contact.
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Hynix / Semiconductor Inc.
Mai Anh D
Townsend and Townsend / and Crew LLP
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