Method for fabricating semiconductor device having flask...

Details Method for fabricating semiconductor device having flask... Method for fabricating semiconductor device having flask...

2006-08-01

2009-02-03

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S700000, C257S330000, C257SE29321, C257SE21384, C257SE21419, C257SE21428

Reexamination Certificate

active

07485557

ABSTRACT:
A method for fabricating a semiconductor device having a flask type recess gate includes forming a hard mask pattern on a substrate, etching the substrate to a predetermined depth using the hard mask pattern to form a first recess pattern, forming a passivation layer on sidewalls of the first recess pattern and the hard mask pattern, etching a bottom surface of the first recess pattern exposed by the passivation layer to form a second recess pattern, oxidizing sidewalls of the second recess pattern to form a silicon oxide layer, removing the passivation layer and the silicon oxide layer in sequential order, and forming a gate pattern over an intended recess pattern including the first recess pattern and the second recess pattern.

REFERENCES:
patent: 2003/0087514 (2003-05-01), Tang et al.
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patent: 2005/0151203 (2005-07-01), Cho et al.
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2006/0113590 (2006-06-01), Kim et al.
patent: 2006/0192266 (2006-08-01), Willer et al.
patent: 10-2007-0014341 (2007-02-01), None
patent: 10-2007-0047042 (2007-05-01), None
patent: 10-2007-0052023 (2007-05-01), None
Wolf et al., “Silicon Processing for the VLSI Era, vol. 1- Process Technology,” 2nd Edition, 2000, pp. 128-129 and 687-688 ISBN 0-9616721-6-1.

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