Method for fabricating semiconductor device having first and...

Details Method for fabricating semiconductor device having first and... Method for fabricating semiconductor device having first and...

2006-08-15

2006-08-15

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S301000, C438S585000

Reexamination Certificate

active

07091076

ABSTRACT:
A method of fabricating a gate electrode used for more flexible device design and higher device integrity is disclosed. A disclosed method comprises: forming a first gate electrode by etching the first insulating layer and the first polysilicon layer; forming a second insulating layer and a second polysilicon layer on the resulting structure; forming a second gate electrode by etching the second polysilicon layer, wherein the longitudinal axes of the first and second gate electrodes cross each other at a predetermined angle; forming a third insulating layer on the resulting structure; and forming source and drain regions by an ion implantation.

REFERENCES:
patent: 5665203 (1997-09-01), Lee et al.
patent: 6060741 (2000-05-01), Huang
patent: 6165884 (2000-12-01), Lee et al.
patent: 6239009 (2001-05-01), Choi et al.
patent: 2005/0051843 (2005-03-01), Inaba

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