Method for fabricating semiconductor device having a buried chan

Details Method for fabricating semiconductor device having a buried chan Method for fabricating semiconductor device having a buried chan

1996-08-06

1999-01-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 438546, H01L 21336

Patent

active

058613340

ABSTRACT:
A method for fabricating a semiconductor device having a buried channel structure, in which impurities having the same conductive type as a well are ion implanted, to increase the ion density beneath the buried channel, thereby enhancing the short channel characteristic and smooth on/off characteristic of MOSFET.

REFERENCES:
patent: 4145233 (1979-03-01), Sefick et al.
patent: 4680603 (1987-07-01), Wei et al.
patent: 4771014 (1988-09-01), Liou et al.
patent: 4943537 (1990-07-01), Harrington, III

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