Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-12
2011-04-12
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S330000, C257SE21429, C257SE21655
Reexamination Certificate
active
07923334
ABSTRACT:
A method for fabricating a semiconductor device includes the following steps. A device isolation layer with a trench type is etched in a predetermined portion of a substrate to define an active region. Predetermined portions where gate lines traverse in the device isolation layer are etched to a certain depth to form a plurality of first recesses. A pair of gate lines filling the first recesses and traversing over the active region is formed. Portions of the active region which storage nodes contact on one sides of the gate lines are etched to form a plurality of second recesses. An ion-implantation process is performed to form a plurality of first junction regions beneath the second recesses and to form a second junction region in a portion of the active region between the gate lines such that the second junction region contacts bit lines.
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Fulk Steven J
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
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