Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-03
2010-02-23
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C438S232000
Reexamination Certificate
active
07666736
ABSTRACT:
After the implantation of fluorine ions into a semiconductor substrate, a gate insulating film, a gate electrode and a protective film are formed on the semiconductor substrate. Thereafter, fluorine ions are again implanted into the semiconductor substrate. Furthermore, p-type source/drain extension regions and source/drain regions are formed in the semiconductor substrate.
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McDermott Will & Emery LLP
Panasonic Corporation
Richards N Drew
Withers Grant S
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