Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-26
2006-09-26
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S981000, C257SE21662
Reexamination Certificate
active
07112486
ABSTRACT:
The present invention provides a method for fabricating a semiconductor device having a dual gate dielectric structure capable of obtaining a simplified process and improving device reliability. The method includes the steps of: forming an insulation layer on a substrate; forming a nitride layer on the insulation layer; selectively etching the nitride layer in a predetermined region of the substrate; performing a radical oxidation process to form an oxide layer on the insulation layer and the etched nitride layer; forming a gate conductive layer on the oxide layer; and performing a selective etching process to the gate conductive layer, the oxide layer, the nitride layer and the insulation layer, so that the first dielectric structure formed in the predetermined region includes the insulation layer and the oxide layer and the second gate dielectric structure formed in regions other than the predetermined region includes the insulation layer, the nitride layer and the oxide layer.
REFERENCES:
patent: 5290725 (1994-03-01), Tanaka et al.
patent: 6482692 (2002-11-01), Kawasaki et al.
patent: 2003/0228725 (2003-12-01), Tsujikawa et al.
Cho Heung-Jae
Jang Se-Aug
Lim Kwan-Yong
Oh Jae-Geun
Shon Hyun-Chul
Blakely & Sokoloff, Taylor & Zafman
Chaudhari Chandra
Hynix / Semiconductor Inc.
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