Method for fabricating semiconductor device and wire with...

Details Method for fabricating semiconductor device and wire with... Method for fabricating semiconductor device and wire with...

2008-01-08

2008-01-08

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S242000, C438S270000, C257SE29262

Reexamination Certificate

active

11163892

ABSTRACT:
A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer is used as a mask to remove a portion of the conductive layer. Afterwards, a spacer is formed on the sidewalls of the conductive layer and the hard mask layer. Afterwards, the hard mask layer is removed. Next, a silicide is formed on the conductive layer.

REFERENCES:
patent: 6091102 (2000-07-01), Sekariapuram et al.
patent: 6207541 (2001-03-01), Das et al.
patent: 6251778 (2001-06-01), Fang et al.
patent: 2002/0061639 (2002-05-01), Itonaga
patent: 2003/0017657 (2003-01-01), Han

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