Method for fabricating semiconductor device and method for produ

Details Method for fabricating semiconductor device and method for produ Method for fabricating semiconductor device and method for produ

1996-06-19

1999-08-10

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438166, 438487, 438535, 438795, H01L 2126

Patent

active

059373040

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.

REFERENCES:
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5366926 (1994-11-01), Mei at al.
patent: 5424230 (1995-06-01), Wakai
patent: 5578520 (1996-11-01), Zhang et al.
S. Chen et al., Solid State Technol., 1(1996)113 "Polysilicon TFT technology will solve problems of mobility".

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device and method for produ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device and method for produ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device and method for produ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1130235