Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2003-07-07

2004-07-20

Cuneo, Kamand (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S785000

Reexamination Certificate

active

06764899

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method for fabricating a semiconductor device; and, more particularly, to a method for forming a hydrogen diffusion barrier layer in a semiconductor device.
DESCRIPTION OF RELATED ARTS
In a semiconductor device, an insulation layer for insulating a bottom structure and a top structure can be classified into an inter-layer insulation layer, an inter-metal insulation layer and a passivation layer.
In an insulation layer formation process, plasma and source gas including hydrogen are typically used. Thus, hydrogen atoms, ions and molecules are diffused into a previously formed bottom structure, particularly into a dielectric thin layer of a capacitor, and this diffusion results in degradation of dielectric material properties. Accordingly, a diffusion barrier layer against hydrogen produced when forming an insulation layer is formed prior to forming the insulation layer.
FIG. 1
is a cross-sectional view showing a conventional method for fabricating a semiconductor device.
As shown, a first inter-layer insulation layer
4
is formed on a substrate
22
providing a first and a second active regions
2
A and
2
B, a device isolation layer
1
and a gate pattern
3
. Then, the first inter-layer insulation layer
4
is selectively removed to form a bit line
5
connected to the second active region
2
B formed on one side of the gate pattern
3
.
A second inter-layer insulation layer
6
is formed on the first inter-layer insulation layer
4
, and an insulation layer
7
for passivation is formed thereon.
Subsequent to the second inter-layer insulation layer
6
formation, an adhesion layer
8
for adhering a lower electrode
9
to the second inter-layer insulation layer
6
is formed on a region where a capacitor will be formed. On top of the adhesion layer
8
, the capacitor including the lower electrode
9
, a dielectric thin layer
10
and an upper electrode
11
is formed. After forming the capacitor, a first diffusion barrier layer
12
for preventing diffusions of hydrogen produced during a subsequent insulation layer formation process is formed in such a manner that it encompasses the capacitor.
Next, a third inter-layer insulation layer
13
is formed, and a contact hole exposing the upper electrode
11
and another contact hole exposing the first active region
2
A formed on the other side of the gate pattern
3
are formed thereafter.
Afterwards, a ferroelectric passivation layer
14
for protecting the upper electrode
11
of the capacitor and a barrier metal layer
15
are formed. A first metal line
16
connecting the upper electrode
11
to the first active region
2
A is formed thereon. A second diffusion barrier layer
17
for preventing diffusions of hydrogen is formed on an entire surface of the substrate
22
so as to encompass the previously formed structure.
A third diffusion barrier layer
18
is formed on the second diffusion barrier layer
17
, and a second metal line
19
is formed thereon. On top of the second metal line
19
, a forth diffusion barrier layer
20
and a passivation layer
21
are sequentially formed.
The above first to third diffusion barrier layers
12
,
17
and
20
are the diffusion barrier layer against hydrogen and usually use Al
2
O
3
or TiO
2
insulation layer. However, this type of insulation layer cannot completely prevent the hydrogen diffusion.
Also, hydrogen in an atom, molecule or plasma state used during the insulation formation process shocks the bottom structure, and this shock effect becomes a critical factor affecting a functional decrease of a semiconductor device.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a hydrogen diffusion barrier layer capable of preventing a bottom structure from damage occurring due to hydrogen produced during a semiconductor device fabrication process.
In accordance with an aspect of the present invention, there is provided a method for fabricating a semiconductor device including the steps of: forming a hafnium vanadium oxide (HfVO
x
) layer on a substrate providing a predetermined structure, the HfVO
x
layer being used as a hydrogen diffusion barrier layer; and forming an insulation layer on the HfVO
x
layer.


REFERENCES:
patent: 5002730 (1991-03-01), Fetcenko
patent: 5122477 (1992-06-01), Wolters et al.
patent: 6274454 (2001-08-01), Katori
patent: 6498714 (2002-12-01), Fujisawa et al.
patent: 6511925 (2003-01-01), Aronowitz et al.
Zhan et al., “Characteristics of High Quality Hafnium oxide Gate dielectric”, Electron Devices Meeting, 2002., IEEE Hong Kong, Jun. 22, 2002, pp. 43-46.

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