Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-04-15

2008-04-15

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S429000, C438S430000, C438S435000, C257SE21429

Reexamination Certificate

active

07358144

ABSTRACT:
A method for fabricating a semiconductor device includes forming first, second, and third device structures in a semiconductor substrate. Each device structure includes a first film, a second film over the first film, and a third film over the second film. The first and third device structures are device isolation structures. A portion of the second device structure is etched to define a bit line contact region, the bit line contact region extending from an upper surface of the second device structure to a lower surface of the second device structure. The second film of the second device structure is etched to define an under-cut space between the first and second films. A semiconductor layer is formed within the under-cut space and the bit line contact region. The third film of the second device structure is etched or removed to define a recess, the recess defining a gate region. A gate structure is formed at least partly within the recess.

REFERENCES:
patent: 5099304 (1992-03-01), Takemura et al.
patent: 6150219 (2000-11-01), Tung
patent: 6593207 (2003-07-01), Hong et al.
patent: 6696349 (2004-02-01), Vollrath et al.
patent: 6955972 (2005-10-01), Lee et al.
patent: 7081398 (2006-07-01), Trivedi
patent: 7217623 (2007-05-01), Kim et al.
patent: 2004/0195608 (2004-10-01), Kim et al.
patent: 2007/0176245 (2007-08-01), Kim et al.
patent: 10-2005-0079270 (2005-08-01), None
patent: 10-2006-0001190 (2006-01-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2794296