Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-05-27

2008-05-27

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S266000, C438S267000, C257SE21691

Reexamination Certificate

active

07378315

ABSTRACT:
A method for fabricating a semiconductor device for a system on chip (SOC) for embodying a transistor for a logic device, an electrical erasable programmable read only memory (EEPROM) cell and a flash memory cell in one chip is provided. Floating gates of the EEPROM cell and the flash memory cell are formed by using a first polysilicon layer; and a gate electrode of the logic device and control gates of the EEPROM cell and the flash memory cell are formed by using a second polysilicon layer. Thus, it is possible to stably form the logic device, the EEPROM cell and the flash memory cell in one chip.

REFERENCES:
patent: 6018178 (2000-01-01), Sung
patent: 6417086 (2002-07-01), Osari
patent: 6579762 (2003-06-01), Io
patent: 6677203 (2004-01-01), Kusumi et al.

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