Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-04-29

2008-04-29

Rose, Kiesha (Department: 4176)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S225000, C438S230000, C438S265000, C438S286000, C438S303000, C438S655000

Reexamination Certificate

active

07364963

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method includes: implanting impurities onto a substrate by performing an ion implantation process; recessing portions of the substrate to form a plurality of trenches; performing a first thermal process to form junction regions between the trenches in the substrate by diffusing the impurities and simultaneously to form a gate oxide layer on the substrate and on the junction regions; forming a polysilicon layer on the gate oxide layer; sequentially etching the polysilicon layer and the gate oxide layer to form a gate structure, and to form first spacers on lateral walls of the junction regions; forming second spacers on lateral walls of the first spacers and the gate structure; and forming a metal silicide layer on top portions of the junction regions and the gate structure.

REFERENCES:
patent: 5854109 (1998-12-01), Sheng et al.
patent: 7060551 (2006-06-01), Huang
patent: 7094655 (2006-08-01), Fukada et al.
patent: 2001/0017800 (2001-08-01), Lee
patent: 2003/0045059 (2003-03-01), Han
patent: 2003/0087491 (2003-05-01), Jeong

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