Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-31
2011-05-31
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S418000, C438S419000, C438S431000, C438S432000, C438S439000, C438S443000, C438S444000, C438S447000, C438S449000, C438S452000
Reexamination Certificate
active
07951679
ABSTRACT:
First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.
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Chinese Office Action mailed Apr. 3, 2009, with English Translation.
Japanese Office Action, with English translation, Japanese Patent Application No. 2004-236714, mailed Jun. 23, 2009.
Arai Masatoshi
Noro Fumihiko
Takahashi Keita
Takahashi Nobuyoshi
Yoshida Koji
Lee Jae
McDermott Will & Emery LLP
Panasonic Corporation
Richards N Drew
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