Method for fabricating semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430315, 430394, 430942, G03F 700

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active

058769013

ABSTRACT:
The method for fabricating a semiconductor device according to the present includes the steps of:
forming an opening in an electron beam resist layer formed on a semiconductor substrate;
forming an opening in a photoresist layer formed on the electron beam resist layer in such a manner that the opening formed at the electron beam layer is exposed, and that the opening formed in the photoresist layer has a larger dimension than that of the opening formed in the electron beam resist layer; and
forming an electrode having a T-shaped cross section by depositing an electrode material via the two openings,
wherein the electron beam resist layer is formed of a polymethacrylate type electron beam resist, and the photoresist layer is formed of a styrene resin type negative resist containing a phenolic hydroxyl group.

REFERENCES:
patent: 4959326 (1990-09-01), Roman
patent: 5383063 (1995-01-01), Samoto
Makino et al., "Fabrication of 70nm T-shaped gate using hybrid UV/EB exposure method" Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies, 30a-V-1, 1994.
Oishi et al., "Techniques for low-noise MODFETs" National Technical Report, (1993) 39(3):339-346.
Hosogi et al., "Photo/EB hybrid exposure process for T-shaped gate superflow-noise HEMTs" Electronics Letters (1991) 27(22):2011-2012.

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