Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1996-01-29
1999-03-02
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430315, 430394, 430942, G03F 700
Patent
active
058769013
ABSTRACT:
The method for fabricating a semiconductor device according to the present includes the steps of:
forming an opening in an electron beam resist layer formed on a semiconductor substrate;
forming an opening in a photoresist layer formed on the electron beam resist layer in such a manner that the opening formed at the electron beam layer is exposed, and that the opening formed in the photoresist layer has a larger dimension than that of the opening formed in the electron beam resist layer; and
forming an electrode having a T-shaped cross section by depositing an electrode material via the two openings,
wherein the electron beam resist layer is formed of a polymethacrylate type electron beam resist, and the photoresist layer is formed of a styrene resin type negative resist containing a phenolic hydroxyl group.
REFERENCES:
patent: 4959326 (1990-09-01), Roman
patent: 5383063 (1995-01-01), Samoto
Makino et al., "Fabrication of 70nm T-shaped gate using hybrid UV/EB exposure method" Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies, 30a-V-1, 1994.
Oishi et al., "Techniques for low-noise MODFETs" National Technical Report, (1993) 39(3):339-346.
Hosogi et al., "Photo/EB hybrid exposure process for T-shaped gate superflow-noise HEMTs" Electronics Letters (1991) 27(22):2011-2012.
Duda Kathleen
Sharp Kabushiki Kaisha
LandOfFree
Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-421097