Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-06-13

2010-11-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C257SE21177

Reexamination Certificate

active

07829403

ABSTRACT:
A method for fabricating a semiconductor device is provided. A first active region and a second active region are defined in a substrate. An electrode covering the first active region and the second active region is formed on the substrate. A first sacrificial layer is formed on the second active layer. A first work function electrode is formed on the first active layer by performing a first doping process to a portion of the electrode. The first sacrificial layer is removed. A second sacrificial layer is formed on the first active layer.

REFERENCES:
patent: 6372590 (2002-04-01), Nayak et al.
patent: 2006/0160290 (2006-07-01), Chong et al.
patent: 2007/0059874 (2007-03-01), Moumen et al.
patent: 2007/0164366 (2007-07-01), Wu et al.
patent: 2008/0017930 (2008-01-01), Kim et al.

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