Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-12-28

2010-10-19

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21429

Reexamination Certificate

active

07816209

ABSTRACT:
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate including a pattern for forming a multi-plane channel, forming a columnar polysilicon layer over the insulation layer and filling in the pattern, and performing a thermal treatment process.

REFERENCES:
patent: 7230312 (2007-06-01), Gonzalez et al.
patent: 7470588 (2008-12-01), Cho et al.
patent: 7563677 (2009-07-01), Yoo et al.
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2006/0138474 (2006-06-01), Yu et al.
patent: 2006/0192249 (2006-08-01), Kim et al.
patent: 2006/0223249 (2006-10-01), Park et al.
patent: 2007/0077713 (2007-04-01), Ha et al.
patent: 2007/0252196 (2007-11-01), Kim et al.
patent: 1020050067730 (2005-07-01), None
patent: 1020070017787 (2007-02-01), None
patent: 1020070030022 (2007-03-01), None
patent: 1020070056766 (2007-06-01), None
Yu et al., “Gate Engineering for Deep-Submicron CMOS Transistors,”IEEE Transactions on Electron Devices45:1253-1262 (1998).

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4171210