Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-12-11

2009-12-29

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C257SE21437

Reexamination Certificate

active

07638400

ABSTRACT:
A method for forming a uniform doped region in a substrate having a non-uniform material layer thereon is provided. The non-uniform material layer is removed form the substrate. Thereafter, a treatment process is performed to form an offset material layer on a predetermined doped region of the substrate. Next, an ion implantation process is performed to form the uniform doped region in the predetermined doped region below the offset material layer.

REFERENCES:
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 6362062 (2002-03-01), Nandakumar
patent: 6380053 (2002-04-01), Komatsu
patent: 6448140 (2002-09-01), Liaw
patent: 6468915 (2002-10-01), Liu
patent: 2001/0016362 (2001-08-01), Brooks et al.
patent: 2003/0214000 (2003-11-01), Jang et al.
patent: 2005/0079655 (2005-04-01), Chen et al.
patent: 2005/0215055 (2005-09-01), Bu et al.
patent: 2005/0227446 (2005-10-01), Kao et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4142686