Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2004-01-14

2009-02-10

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000, C257SE21271

Reexamination Certificate

active

07488655

ABSTRACT:
A metal film is deposited on a silicon region in a non-oxidizing atmosphere, after which the metal film is oxidized with radicals capable of oxidizing the metal film, such as oxygen radicals, to form a metal oxide film serving as a gate insulating film.

REFERENCES:
patent: 5017277 (1991-05-01), Yoshida et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6245606 (2001-06-01), Wilk et al.
patent: 6391727 (2002-05-01), Park
patent: 6426272 (2002-07-01), Fu et al.
patent: 6573193 (2003-06-01), Yu et al.
patent: 6602753 (2003-08-01), Koyama et al.
patent: 2002/0014834 (2002-02-01), Koyama et al.
patent: 01-154547 (1989-06-01), None
patent: 2000-243951 (2000-09-01), None
patent: 2001-210636 (2001-08-01), None
patent: 2001-237424 (2001-08-01), None
patent: 2003-017688 (2003-01-01), None
patent: 2003-249497 (2003-09-01), None
patent: 2005-079563 (2005-03-01), None
Yamaguchi et al., “Study on Zr-Silicate Interfacial Layer of ZrO2—MIS Structure fabricated by Pulsed Laser Ablation Deposition Method.” Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, Sendal, 2000, pp. 228-229.
Foreign Office Action, dated Sep. 26, 2006 and English Translation thereof.

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