Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-28
2009-10-13
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S424000, C438S221000, C438S296000
Reexamination Certificate
active
07601576
ABSTRACT:
The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate10a hard mask20of a silicon oxide film12, and a silicon nitride film14having a width smaller than a width of the silicon oxide film12; etching the silicon substrate10with the hard mask20as the mask to form a trench26for defining an active region24in the silicon substrate10; and forming a silicon oxide film28on the silicon substrate10with the trench26formed in.
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Morioka Hiroshi
Suzuki Rintaro
Terahara Masanori
Fujitsu Microelectronics Limited
Luu Chuong A.
Westerman, Hattori, Daniels & Adrian , LLP.
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