Method for fabricating semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S424000, C438S221000, C438S296000

Reexamination Certificate

active

07601576

ABSTRACT:
The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate10a hard mask20of a silicon oxide film12, and a silicon nitride film14having a width smaller than a width of the silicon oxide film12; etching the silicon substrate10with the hard mask20as the mask to form a trench26for defining an active region24in the silicon substrate10; and forming a silicon oxide film28on the silicon substrate10with the trench26formed in.

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