Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-12-28

2009-11-17

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S638000

Reexamination Certificate

active

07618860

ABSTRACT:
A method for fabricating a semiconductor device includes forming a first insulating layer over a substrate where a landing contact plug is formed, forming an etch barrier pattern having a line type open region over the first insulating layer, forming a second insulating layer for planarization over the etch barrier pattern, forming a contact mask having a hole type open region over the second insulating layer, performing a self-aligned contact etching process using the etch barrier pattern to etch the second insulating layer disposed under the hole type open region and the first insulating layer disposed under the line type open region to form a contact hole a bottom of which is opened above the landing contact plug, forming a storage node contact plug in the contact hole, and forming a storage node over the storage node contact plug.

REFERENCES:
patent: 2005/0073053 (2005-04-01), Park
patent: 10-2004-0000068 (2004-01-01), None
patent: 10-2004-0011993 (2004-02-01), None
patent: 10-0558036 (2006-02-01), None
patent: 10-0587636 (2006-05-01), None

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