Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-19
2008-05-13
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C257SE27108
Reexamination Certificate
active
07371628
ABSTRACT:
A method for fabricating a semiconductor device is provided. The method mainly involves steps of forming at least one first patterned high stress layer below a silicon substrate, then forming a semiconductor device onto the substrate, and forming at least one second patterned high stress layer on the semiconductor device. According to the method, the characteristics of the PMOS and the NMOS transistors formed on the same wafer may be improved simultaneously, by utilizing the stress of the patterned layers of high stress material. Further, the mobility of the carriers is enhanced, so that the output characteristic of the transistors can be improved.
REFERENCES:
patent: 6919282 (2005-07-01), Sakama et al.
patent: 7153735 (2006-12-01), Sashida
patent: 2004/0262692 (2004-12-01), Hareland et al.
patent: 2005/0208776 (2005-09-01), Krishnan et al.
patent: 2005/0215069 (2005-09-01), Currie et al.
patent: 2005/0233514 (2005-10-01), Bu et al.
patent: 2005/0247926 (2005-11-01), Sun et al.
patent: 2005/0275108 (2005-12-01), Saiki et al.
patent: 2006/0024873 (2006-02-01), Nandakumar et al.
patent: 2006/0223290 (2006-10-01), Belyansky et al.
patent: 2007/0063186 (2007-03-01), Rao
C.-H. Ge et al., “Process-Strained Si(PSS) CMOS Technology Featuring 3D Strain Engineering”, 2003 IEEE.
A. Shimizu, et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, 2001 IEEE.
Lin Cha-Hsin
Liu Chee-Wee
Pei Zing-Way
Le Thao P.
Rabin & Berdo P.C.
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