Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-12-21

2008-03-04

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S239000, C438S396000, C438S964000

Reexamination Certificate

active

07338855

ABSTRACT:
A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition; forming an uneven surface in the polysilicon layer by etching the polysilicon layer with an isotropic etchant; forming an upper metal layer on the polysilicon layer; sequentially etching the upper metal layer and the polysilicon layer; and performing chemical-mechanical polishing after completing a gap-fill process on the upper metal layer.

REFERENCES:
patent: 5233310 (1993-08-01), Inoue
patent: 6159793 (2000-12-01), Lou
patent: 2001/0050390 (2001-12-01), Kawai et al.
patent: 2003/0161081 (2003-08-01), Girardie
patent: 2005/0062130 (2005-03-01), Ciancio et al.
patent: 2005/0112836 (2005-05-01), Kim et al.

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