Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2004-12-21

2008-03-04

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S305000, C438S306000, C257SE21641

Reexamination Certificate

active

07338871

ABSTRACT:
The present invention provides a method for fabricating a semiconductor device capable of preventing a contact resistance from increasing in a region contacted to an N-type conductive region during forming a conductive pattern directly contacted to the N-type conductive region including a conductive pattern and silicon, and preventing an increase in a parasitic capacity of the conductive pattern according to an increase in a thickness of a barrier layer.

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patent: 2005/0239287 (2005-10-01), Wang et al.
patent: 10-2005-0009354 (2005-01-01), None

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