Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-08-14

2007-08-14

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257S315000, C438S264000

Reexamination Certificate

active

11024176

ABSTRACT:
Method for fabricating a semiconductor device, including the steps of providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon, forming a first insulating film, second conductive type polysilicon, and a second insulating film in succession on the semiconductor substrate, selectively removing the first insulating film, the polysilicon, and the second insulating film, to form a floating gate pattern at the cell region, elevating a temperature initially in a state O2gas is injected, maintaining a fix temperature, and dropping the temperature in a state N2gas is injected, to form a gate oxide film on a surface of the semiconductor substrate at the logic region, and forming a gate electrode pattern at each of the cell region and the logic region, whereby preventing a threshold voltage of a semiconductor device from dropping due to infiltration of impurities from doped polysilicon at the cell region to the active channel region.

REFERENCES:
patent: 5648282 (1997-07-01), Yoneda
patent: 6194320 (2001-02-01), Oi
patent: 6252276 (2001-06-01), Ramsbey et al.
patent: 6344386 (2002-02-01), Io
patent: 2001/0026973 (2001-10-01), Yeh et al.
patent: 2003/0003604 (2003-01-01), Morita et al.
patent: 2003/0003770 (2003-01-01), Morita et al.
patent: 2003/0008458 (2003-01-01), Hashimoto et al.

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