Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-06-05

2007-06-05

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000

Reexamination Certificate

active

10749533

ABSTRACT:
The present invention is related to a method for forming a storage node of a semiconductor device. The method includes the steps of: (a) forming a plurality of bit line patterns, each including a wire and a hard mask sequentially stacked on a surface of a substrate structure; (b) sequentially forming a first barrier layer and a first inter-layer insulation layer along a profile containing bit line patterns until filling spaces between the bit line patterns; (c) etching the first inter-layer insulation layer until a partial portion of the first inter-layer insulation layer remains on each space between the bit line patterns; (d) forming a second barrier layer on the first inter-layer insulation layer and the first barrier layer; and (e) etching the first and the second barrier layers and the remaining first inter-layer insulation layer to expose a surface of the substrate structure disposed between the bit line patterns.

REFERENCES:
patent: 6096595 (2000-08-01), Huang
patent: 6177320 (2001-01-01), Cho et al.
patent: 6255224 (2001-07-01), Kim
patent: 6316368 (2001-11-01), Lin et al.
patent: 6369446 (2002-04-01), Tanaka
patent: 6461911 (2002-10-01), Ahn et al.
patent: 6511919 (2003-01-01), Park et al.
patent: 6555481 (2003-04-01), Nakamura
patent: 2005/0064727 (2005-03-01), Lee et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3879356