Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-12-18

2007-12-18

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S216000, C438S257000, C438S266000

Reexamination Certificate

active

11527459

ABSTRACT:
In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.

REFERENCES:
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patent: 2002-110821 (2000-09-01), None
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patent: 2003-086716 (2003-03-01), None
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