Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-10-02

2007-10-02

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S231000, C438S232000, C438S283000

Reexamination Certificate

active

11227224

ABSTRACT:
A method for fabricating a semiconductor device including on a single semiconductor substrate, a first MOS transistor having a first gate insulating film of a predetermined thickness, and second and third MOS transistors sharing a second gate insulating film smaller in thickness than the first gate insulating film, the third MOS transistor being lower in threshold voltage than the second MOS transistor, the method includes the steps of: adjusting the threshold voltages of the first and third MOS transistors by first ion-implantation; and adjusting the threshold voltage of the second MOS transistor by second ion-implantation, the second ion-implantation being performed under implantation conditions different from those of the first ion-implantation.

REFERENCES:
patent: 6287912 (2001-09-01), Asakura et al.
patent: 06-283675 (1994-10-01), None
patent: P2000-77635 (2000-03-01), None

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