Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-01-02

2007-01-02

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S517000

Reexamination Certificate

active

11078543

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method comprises: providing a substrate; forming a gate structure on the substrate, the gate structure including a gate dielectric layer on the substrate and a gate conductive layer on the gate dielectric layer; forming an oxide layer conformally covering the substrate and the gate structure; forming a dielectric layer covering the oxide layer; removing a portion of the dielectric layer to form a spacer on a sidewall of the gate structure, the oxide layer between the spacer and the gate structure as an oxide spacer; performing an oxygen plasma treatment process to form an silicon oxide layer in the substrate below the oxide layer, the silicon oxide layer and the oxide layer being an offset oxide layer; and forming a source/drain region in the substrate at two sides of the gate structure.

REFERENCES:
patent: 4471524 (1984-09-01), Kinsbron et al.
patent: 5612249 (1997-03-01), Sun et al.
patent: 6380053 (2002-04-01), Komatsu
patent: 6448140 (2002-09-01), Liaw
patent: 2001/0016362 (2001-08-01), Brooks et al.
patent: 2004/0137672 (2004-07-01), Lee et al.
patent: 2004/0180504 (2004-09-01), Lee et al.
patent: 2005/0227447 (2005-10-01), Hsieh

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3759196