Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-09-25

2007-09-25

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

10399755

ABSTRACT:
After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

REFERENCES:
patent: 5254143 (1993-10-01), Anazawa et al.
patent: 5434107 (1995-07-01), Paranjpe
patent: 5679610 (1997-10-01), Matsuda et al.
patent: 6091481 (2000-07-01), Mori
patent: 6124215 (2000-09-01), Zheng
patent: 0 683 511 (1995-11-01), None
patent: 0 862 202 (1998-09-01), None
patent: 0 928 638 (1999-07-01), None
patent: 62 045045 (1987-02-01), None
patent: 07-147393 (1995-06-01), None
patent: 09-213791 (1997-08-01), None
patent: 10-32198 (1998-02-01), None
patent: 10-85641 (1998-04-01), None
patent: 10-149964 (1998-06-01), None
patent: 10-247647 (1998-09-01), None
patent: 10-90675 (1998-10-01), None
patent: 11-274297 (1999-10-01), None
patent: 2000-294627 (2000-10-01), None
patent: WO 01/18860 (2001-03-01), None
Doane, J. William. “Liquid Crystal Materials.” Japanese Technology Evaluation Center: 1992, p. 2. Available http://www.wtec.org/loyola/dsply_jp/c2_s2.htm.
Machine translation of Japanese Publication No. 10-090675.
Koyama, Kazuhide. Japanese Patent Abstract JP411330235A “Method and Device for Working Insulating Layer of Semiconductor Device” (abstract only) Nov. 30, 1999.
J.P. Han, et al., “SrBi2Te2O9(SBT) Thin Films Prepared by Electrostatic Spray”, New York, NY, vol. 14, No. 1/4, 1997, pp. 229-235, (XP-002036525).

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