Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-03-13

2007-03-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S296000, C438S587000, C438S589000, C438S592000, C438S702000

Reexamination Certificate

active

11212627

ABSTRACT:
Disclosed herein is a method for fabricating a memory device. According to the present invention, a device isolation film is etched using a mask partially exposing a channel region and the device isolation film adjacent thereto during the etching process of the recess gate region, and a semiconductor substrate in the recess gate region is etched. Accordingly, a silicon horn in the recess gate region is prevented from being formed, thereby increasing a margin of the etching process.

REFERENCES:
patent: 6620693 (2003-09-01), Lai et al.
patent: 2001/0025973 (2001-10-01), Yamada et al.
J.Y. Kim et al., “The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88nm feature size and beyond”, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 11-12.

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