Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-13
2007-03-13
Doan, Theresa T. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S738000, C438S287000
Reexamination Certificate
active
11169708
ABSTRACT:
A method for fabricating a semiconductor device is disclosed. The method provides etching a predetermined region of a semiconductor substrate prior to formation of a device isolation film defining an active region and forming a gate having a stepped gate channel.
REFERENCES:
patent: 2004/0182815 (2004-09-01), Lee et al.
patent: 2006/0073661 (2006-04-01), Lee
Doan Theresa T.
Heller Ehrman LLP
Hynix / Semiconductor Inc.
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