Method for fabricating semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S738000, C438S287000

Reexamination Certificate

active

11169708

ABSTRACT:
A method for fabricating a semiconductor device is disclosed. The method provides etching a predetermined region of a semiconductor substrate prior to formation of a device isolation film defining an active region and forming a gate having a stepped gate channel.

REFERENCES:
patent: 2004/0182815 (2004-09-01), Lee et al.
patent: 2006/0073661 (2006-04-01), Lee

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