Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-05-22

2007-05-22

Barnie, Rexford (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C438S586000

Reexamination Certificate

active

10882357

ABSTRACT:
A method for fabricating a semiconductor device in which plural transistors including a first transistor and a second transistor are integrated includes a first step for forming the first transistor such that a distance between a drain contact and a gate electrode of the first transistor is a first distance, and a second step for forming the second transistor such that a distance between a drain contact and a gate electrode of the second transistor is a second distance larger than the first distance.

REFERENCES:
patent: 5338986 (1994-08-01), Kurimoto
patent: 6004838 (1999-12-01), Ma et al.
patent: 2004/0041228 (2004-03-01), Houston
patent: 5-335500 (1993-12-01), None
Wolf, Stanley, “Isolation Technologies for Integrated Circuits,” Silicon Processing for the VLSI Era—vol. 2: Process Integration, Lattice Press, Jan. 1990, pp. 66-78.

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