Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-08-22

2006-08-22

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S535000

Reexamination Certificate

active

07094639

ABSTRACT:
An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

REFERENCES:
patent: 5049957 (1991-09-01), Inoue et al.
patent: 6146938 (2000-11-01), Saida et al.
patent: 6632729 (2003-10-01), Paton
patent: 6747748 (2004-06-01), Matsudo et al.
patent: 8-124923 (1996-05-01), None
patent: 2001-168325 (2001-06-01), None
patent: 2001-223367 (2001-08-01), None
patent: 2002-057301 (2002-02-01), None
patent: 2002-164514 (2002-06-01), None
patent: 2003-298020 (2003-10-01), None
patent: 2003-298021 (2003-10-01), None
Noriyuki Miyata et al., “Thermal Stability of HfO2/Ultrathin-SiO2/Si Structures”, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, pp478-479, 2002.
Shigenori Hayashi et al., “Preparation and characterization of high-k gate dielectric films by reactive sputtering”, The 60thSympo. Semiconductors and Integrated Circuits Technology, pp 12-16.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3619072