Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-18
2006-04-18
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S399000, C438S238000, C438S397000, C438S253000, C438S254000, C438S255000, C438S256000, C438S381000, C438S396000, C438S398000
Reexamination Certificate
active
07029970
ABSTRACT:
A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a sufficient capacitance of a capacitor by increasing an effective capacitor area. The method includes the steps of: preparing a semi-finished semiconductor substrate; forming a sacrificial layer on the semi-finished semiconductor substrate; patterning the sacrificial layer by using an island-type photoresist pattern, thereby obtaining at least one contact hole to expose portions of the semi-finished semiconductor substrate; and forming a conductive layer on the sacrificial layer.
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Baumeister B. William
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Yevsikov Victor V.
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